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| DM-232 Magnetoresistance Element For the availability of this product, please contact the sales office. Description DM-232 a magnetic sensor using magnetoresistance effect is composed of ferromagnetic material deposited by evaporation on a silicon substrate. It is suitable for angle of rotation detection. Features * Low magnetic field and high sensitivity: bridge type stands for large output voltage 150 mVp-p (Min.) at VCC=5 V, H=14400 A/m * Fitted with bias magnet: stable output. * High reliability: Achieved through silicon nitride protective film. Structure Ferromagnetic thin film circuit (With ferrite magnet) Applications * Non-contact angle of rotation detection. * Contactless potentiometer. Absolute Maximum Ratings (Ta=25 C) * Supply voltage VCC 10 * Storage temperature Tstg -30 to +100 M-118 (Plastic) V C Recommended Operating Conditions * Supply voltage VCC 5 * Operating temperature Topr -20 to + 75 Electrical Characteristics Item Output voltage Midpoint potential Midpoint potential difference/Output voltage Total resistance Symbol VO VA, VB |VA-VB| VO RT V C Ta=25 C Condition VCC=5 V , H=14400A/m (Peak) AC magnetic field =0 VCC=5 V , H=0 A/m VCC=5 V , H=0 A/m H=14400A/m (Peak) AC magnetic field =0 Min. 150 2.475 Typ. Max. Unit mVp-p 2.525 15 V % 500 650 800 Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. --1-- E88Z13D5X-TE DM-232 Equivalent Circuit 1 VCC RA 2 VA RB RD 4 V RC B 3 GND Basic Performance 1) Operation principle Synthetic magnetic field (a) Bias magnetic field H=14400A/m External magnetic field H 1 Synthetic magnetic field (b) RA 2 RD 4 RB RC 3 External magnetic field H Various resistances change according to the direction of the combnied bias and external magnetic field. ) When the direction of the synthetic magnetic field is (a), RA,RC : Minimum resistance RB,RD : Maximum resistance ) When the direction of the synthetic magnetic field is (b), RA,RC : Maximum resistance RB,RD : Minimum resistance Device internal structure (Back of mark face) 3 4 2 Bias magnetic field 1 2) Power supply pin and output pin 2 1 1 VCC 232 3 4 3) Sensitivity direction Non-Sensitive Sensitive 2 4 Out put Differential amplifier 3 GND The ferromagnetic magnetoresistance element differs from the semiconductor magnetoresistance element and hole element in that it responds only to the magnetic field within the element's surface. It is not sensitive to the magnetic field perpendicular to the element. --2-- DM-232 Basic Application Rotation angular detection S N 2 1 3 4 Out put Differential amplifier Out put H=14400A/m H 232 0 -90 90 Magnetic field angle Handling precautions 1) Most suitable magnetic field intensity When the external magnetic field is at H=14400A/m, rotation angle can be detected most effectively. Out put 232 -90 0 90 Magnetic field angle H<14400A/m H=14400A/m H>14400A/m Whe the external magnetic field H<14400A/m, output voltage shrinks. When the external magnetic field H>14400A/m, the detection angle range shrinks. Whe the external magnetic field H<14400A/m, the detection angle range becomes larger. In regions other than -90 to +90, the magnetic field combined with the bias magnetic field, shrinks down, which is not advisable. Also, when the range to be detected is smaller than -90 to +90 it is more advantageous to turn to H>14400A/m. 2) External magnetic field direction With regards to the bias magnetic field, usage at other than 90 should be avoided. That causes a decrease in the combined magnetic field intensity, that is not recommended. H 232 H 1 1 232 H H --3-- DM-232 Midpoint potential vs. Magnetic field Intensi ty (1) Midpoint potential vs. Magnetic field Intensity (2) 2.54 H 2.54 H GND VB-Midpoint potential (V) VA-Midpoint potential (V) 2.52 VA VCC 232 232 2.52 VCC GND VB VCC=5V 2.50 VCC=5V 2.50 2.48 VA VCC 2.46 0 4000 8000 12000 H 232 2.48 VCC 2.46 H 232 GND GND VB 16000 0 4000 8000 12000 16000 H-Magnetic field intensity (A/m) H-Magnetic field intensity (A/m) Midpoint potential vs. Magnetic field direction 200 2.54 VB Output voltage vs. Magnetic field intensity VA, VB-Midpoint potential (V) Vo-Output voltage (mVp-p) 2.52 H 232 GND VB 150 2.50 VA VCC 100 VA VCC 50 H 232 2.48 VA 2.46 -90 -45 0 45 90 VCC=5V H=14400A/m GND VB H: Peak intensity of AC magnetic field VCC=5V 0 4000 8000 12000 16000 -Magnetic field direction (deg) H-Magnetic field intensity (A/m) Temperature characteristics 800 Vo-Output voltage (mVp-p) 200 RT 700 150 600 VO 100 H=14400A/m AC Magnetic field VCC=5V 50 -20 0 20 40 60 80 500 400 Ta-Ambient temperature (C) RT Total resistance () --4-- DM-232 Package Outline Unit : mm M-118 0.4 2.54 0.15 2.5 MAX 0.25 SONY CODE EIAJ CODE JEDEC CODE M-118 PACKAGE WEIGHT 0.2g --5-- 22.0 0.3 4.5 0.1 + 0.4 4.5 - 0.1 |
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